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2005 Microchip Technology Inc.
Preliminary
DS41265A-page 237
PIC16F946
Capacitive Loading Specs
on Output Pins
D100
COS
C2
OSC2 pin
—
15*
pF
In XT, HS and LP modes
when external clock is used to
drive OSC1
D101
CIO
All I/O pins
—
50*
pF
Data EEPROM Memory
D120
ED
Byte Endurance
100K
1M
—
E/W -40
°C ≤ TA ≤ +85°C
D120A ED
Byte Endurance
10K
100K
—
E/W +85°C
≤ TA ≤ +125°C
D121
VDRW VDD for Read/Write
VMIN
—
5.5
V
Using EECON1 to read/write
VMIN = Minimum operating
voltage
D122
TDEW Erase/Write Cycle Time
—
5
6
ms
D123
TRETD Characteristic Retention
40
—
Year Provided no other specifica-
tions are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(2)
1M
10M
—
E/W -40
°C ≤ TA ≤ +85°C
Program Flash Memory
D130
EP
Cell Endurance
10K
100K
—
E/W -40
°C ≤ TA ≤ +85°C
D130A ED
Cell Endurance
1K
10K
—
E/W +85°C
≤ TA ≤ +125°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating
voltage
D132
VPEW VDD for Erase/Write
4.5
—
5.5
V
D133
TPEW Erase/Write cycle time
—
2
2.5
ms
D134
TRETD Characteristic Retention
40
—
Year Provided no other specifica-
tions are violated
19.4
DC Characteristics: PIC16F946-I (Industrial), PIC16F946-E (Extended) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
*
These parameters are characterized but not tested.
Data in ‘Typ’ column is at 5.0V, 25
°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1:
In RC oscillator configuration, the OSC1/CLKI pin is a Schmitt Trigger input. It is not recommended to use an
external clock in RC mode.
2:
Negative current is defined as current sourced by the pin.
3:
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
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